China ALD Manufacturer, Supplier, Factory


Thin film preparation processes can be divided into two categories according to their film forming methods: physical vapor deposition (PVD) and chemical vapor deposition (CVD), of which CVD process equipment accounts for a higher proportion. Atomic layer deposition (ALD) is one of the chemical vapor deposition (CVD).


Atomic layer deposition technology (Atomic Layer Deposition, referred to as ALD) is a vacuum coating process that forms a thin film on the surface of a substrate layer by layer in the form of a single atomic layer. ALD technology is currently being widely adopted by the semiconductor industry.


Atomic layer deposition process:


Atomic layer deposition usually includes a cycle of 4 steps, which is repeated as many times as needed to achieve the required deposition thickness. The following is an example of ALD of Al₂O₃, using precursor substances such as Al(CH₃) (TMA) and O₂.


Step 1) Add TMA precursor vapor to the substrate, TMA will adsorb on the substrate surface and react with it. By selecting appropriate precursor substances and parameters, the reaction will be self-limiting.

Step 2) Remove all residual precursors and reaction products.

Step 3) Low-damage remote plasma irradiation of the surface with reactive oxygen radicals oxidizes the surface and removes surface ligands, a reaction that is also self-limiting due to the limited number of surface ligands.

Step 4) Reaction products are removed from the chamber.


Only step 3 differs between thermal and plasma processes, with H₂O being used in thermal processes and O₂ plasma being used in plasma processes. Since the ALD process deposits (sub)-inch-thick films per cycle, the deposition process can be controlled at the atomic scale.



1st Half-CyclePurge2nd Half-CyclePurge



Highlights of Atomic Layer Deposition (ALD):


1) Grow high-quality thin films with extreme thickness accuracy, and only grow a single atomic layer at a time

2) Wafer thickness can reach 200 mm, with typical uniformity <±2%

3) Excellent step coverage even in high aspect ratio structures

4) Highly fitted coverage

5) Low pinhole and particle levels

6) Low damage and low temperature process

7) Reduce nucleation delay

8) Applicable to a variety of materials and processes


Compared with traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), the advantages of ALD are excellent three-dimensional conformality, large-area film uniformity, and precise thickness control, etc. It is suitable for growing ultra-thin films on complex surface shapes and high aspect ratio structures. Therefore, it is widely applicable to substrates of different shapes and does not require control of reactant flow uniformity.


Comparison of the advantages and disadvantages of PVD technology, CVD technology and ALD technology:


PVD technology
CVD technology
ALD technology
Faster deposition rate
Average deposition rate
Slower deposition rate
Thicker film thickness, poor control of nano-level film thickness precision

Medium film thickness

(depends on the number of reaction cycles)

Atomic-level film thickness
The coating has a single directionality
The coating has a single directionality
Good uniformity of large-area film thickness
Poor thickness uniformity
Average step coverage
Best step coverage
Poor step coverage
\ Dense film without pinholes


Advantages of ALD technology compared to CVD technology (Source: ASM)








Vetek Semiconductor is a professional ALD Susceptor products supplier in China. Our ALD Susceptor, SiC coating ALD susceptor and ALD Planetary Susceptor are widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced and customizable ALD Susceptor products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.



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ALD Receptor

ALD Receptor

Ang VeTek Semiconductor ay isang propesyonal na tagagawa ng ALD Susceptor, CVD SiC coating, CVD TAC COATING graphite base sa China. Ang Vetek Semiconductor ay sama-samang bumuo at gumawa ng SiC-coated na ALD na mga planetary base kasama ng mga manufacturer ng ALD system upang matugunan ang matataas na pangangailangan ng proseso ng ALD at pantay na ipamahagi ang daloy ng hangin sa substrate. Inaasahan namin ang karagdagang pakikipagtulungan sa iyo.

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SiC coating ALD susceptor

SiC coating ALD susceptor

Bilang isang propesyonal na SiC coating ALD susceptor manufacturer at supplier sa China, ang VeTek Semiconductor's SiC coating ALD susceptor ay isang support component na partikular na ginagamit sa atomic layer deposition (ALD) na proseso. Ito ay gumaganap ng isang mahalagang papel sa kagamitan ng ALD, na tinitiyak ang pagkakapareho at katumpakan ng proseso ng pag-deposition. Naniniwala kami na ang aming mga produkto ng ALD Planetary Susceptor ay maaaring maghatid sa iyo ng mga de-kalidad na solusyon sa produkto.

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ALD Planetary Susceptor

ALD Planetary Susceptor

Ang proseso ng ALD, ay nangangahulugang proseso ng Atomic Layer Epitaxy. Ang mga tagagawa ng Vetek Semiconductor at ALD system ay bumuo at gumawa ng SiC coated ALD Planetary Susceptors na nakakatugon sa matataas na kinakailangan ng proseso ng ALD upang pantay na maipamahagi ang airflow sa ibabaw ng substrate. Kasabay nito, tinitiyak ng mataas na kadalisayan ng Vetek Semiconductor na CVD SiC coating ang kadalisayan sa proseso. Maligayang pagdating upang talakayin ang pakikipagtulungan sa amin.

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Bilang isang propesyonal na ALD tagagawa at supplier sa China, mayroon kaming sariling pabrika. Kung kailangan mo ng mga customized na serbisyo upang matugunan ang mga partikular na pangangailangan ng iyong rehiyon o gusto mong bumili ng advanced at matibay ALD na gawa sa China, maaari kang mag-iwan sa amin ng mensahe.
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