8 Inch Halfmoon Part para sa LPE Reactor Factory

Tantalum Carbide Coated Planetary Rotation Disk Manufacturer

SiC Coated Barrel Susceptor para sa LPE PE2061S Supplier

Tantalum Carbide Coating

Ang VeTek semiconductor ay isang nangungunang tagagawa ng Tantalum Carbide Coating na materyales para sa industriya ng semiconductor. Kabilang sa aming mga pangunahing inaalok na produkto ang mga bahagi ng CVD tantalum carbide coating, sintered TaC coating parts para sa paglago ng SiC crystal o proseso ng semiconductor epitaxy. Naipasa ang ISO9001, ang VeTek Semiconductor ay may mahusay na kontrol sa kalidad. Nakatuon ang VeTek Semiconductor na maging innovator sa industriya ng Tantalum Carbide Coating sa pamamagitan ng patuloy na pagsasaliksik at pagbuo ng mga iterative na teknolohiya.

Ang mga pangunahing produkto ayTantalum Carbide coating defector ring, TaC coated diversion ring, TaC coated halfmoon parts, Tantalum Carbide Coated Planetary Rotation Disk (Aixtron G10) , TaC Coated Crucible; Mga Singsing na Pinahiran ng TaC; TaC Coated Porous Graphite; Tantalum Carbide Coating Graphite Susceptor; TaC Coated Guide Ring; TaC Tantalum Carbide Coated Plate; TaC Coated Wafer Susceptor; TaC Coating Ring; TaC Coating Graphite Cover; TaC Coated Chunkatbp, ang kadalisayan ay mas mababa sa 5ppm, maaaring matugunan ang mga kinakailangan ng customer.

Ang TaC coating graphite ay nilikha sa pamamagitan ng paglalagay sa ibabaw ng isang high-purity graphite substrate na may pinong layer ng tantalum carbide sa pamamagitan ng isang proprietary Chemical Vapor Deposition (CVD) na proseso. Ang kalamangan ay ipinapakita sa larawan sa ibaba:

Performance Advantages of Tantalum Carbide Coating

Ang tantalum carbide (TaC) coating ay nakakuha ng pansin dahil sa mataas na punto ng pagkatunaw nito na hanggang sa 3880°C, mahusay na mekanikal na lakas, tigas, at paglaban sa mga thermal shock, na ginagawa itong isang kaakit-akit na alternatibo sa compound semiconductor epitaxy na mga proseso na may mas mataas na mga kinakailangan sa temperatura, tulad ng Aixtron MOCVD system at LPE SiC epitaxy process. Mayroon din itong malawak na aplikasyon sa PVT method na SiC crystal growth process.

Mga Pangunahing Tampok:

Katatagan ng temperatura

Napakataas na kadalisayan

Paglaban sa H2, NH3, SiH4, Si

Paglaban sa thermal stock

Malakas na pagdirikit sa grapayt

Conformal coating coverage

Sukat hanggang 750 mm diameter (Ang tanging tagagawa sa China ay umabot sa ganitong laki)

Mga aplikasyon:

Wafer carrier

Inductive heating susceptor

Resistive heating element

Satellite disk

Showerhead

Guide ring

LED Epi receiver

Injection nozzle

Masking singsing

Panangga sa init

Tantalum carbide (TaC) coating sa isang microscopic cross-section:

Tantalum carbide (TaC) coating on a microscopic cross-section

Parameter ng VeTek Semiconductor Tantalum Carbide Coating:

Mga pisikal na katangian ng TaC coating
Densidad	14.3 (g/cm³)
Tukoy na emissivity	0.3
Thermal expansion coefficient	6.3 10^-6/K
Katigasan (HK)	2000 HK
Paglaban	1×10^-5Ohm*cm
Thermal na katatagan	<2500℃
Mga pagbabago sa laki ng graphite	-10~-20um
Kapal ng patong	≥20um karaniwang halaga (35um±10um)

TaC coating EDX data：

TaC coating EDX data

Data ng istraktura ng kristal na patong ng TaC

Elemento	Atomic na porsyento
	Pt. 1	Pt. 2	Pt. 3	Katamtaman
C K	52.10	57.41	52.37	53.96
Ta M	47.90	42.59	47.63	46.04

TaC Coating Chuck TaC Coating Planetary Disk TaC Coated Plate TaC Coating Rotation Plate TaC coating susceptor Covering ng CVD TaC coating CVD TaC Coating Ring TaC Coating Plate

Silicon Carbide Coating

Dalubhasa ang VeTek Semiconductor sa paggawa ng mga ultra pure Silicon Carbide Coating na mga produkto, ang mga coatings na ito ay idinisenyo upang mailapat sa purified graphite, ceramics, at refractory metal na mga bahagi.

Ang aming mga high purity coating ay pangunahing naka-target para sa paggamit sa mga industriya ng semiconductor at electronics. Nagsisilbi ang mga ito bilang proteksiyon na layer para sa mga wafer carrier, susceptor, at heating elements, na nagpoprotekta sa mga ito mula sa mga kinakaing unti-unti at reaktibong kapaligiran na nakatagpo sa mga proseso gaya ng MOCVD at EPI. Ang mga prosesong ito ay mahalaga sa pagpoproseso ng wafer at paggawa ng device. Bukod pa rito, ang aming mga coatings ay angkop na angkop para sa mga aplikasyon sa mga vacuum furnace at sample heating, kung saan mayroong mataas na vacuum, reactive, at oxygen na kapaligiran.

Sa VeTek Semiconductor, nag-aalok kami ng komprehensibong solusyon sa aming mga advanced na kakayahan sa machine shop. Nagbibigay-daan ito sa amin na gumawa ng mga base na bahagi gamit ang graphite, ceramics, o refractory metal at ilapat ang SiC o TaC ceramic coatings sa loob ng bahay. Nagbibigay din kami ng mga serbisyo ng coating para sa mga bahaging ibinibigay ng customer, na tinitiyak ang kakayahang umangkop upang matugunan ang magkakaibang mga pangangailangan.

Ang aming mga produkto ng Silicon Carbide Coating ay malawakang ginagamit sa Si epitaxy, SiC epitaxy, MOCVD system, proseso ng RTP/RTA, proseso ng etching, proseso ng pag-ukit ng ICP/PSS, proseso ng iba't ibang uri ng LED, kabilang ang asul at berdeng LED, UV LED at deep-UV LED atbp., na inangkop sa kagamitan mula sa LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI at iba pa.

Mga bahagi ng reactor na maaari nating gawin:

Ang Silicon Carbide Coating ng ilang natatanging pakinabang:

Silicon Carbide Coating several unique advantages

VeTek Semiconductor Silicon Carbide Coating Parameter:

Mga pangunahing pisikal na katangian ng CVD SiC coating
Ari-arian	Karaniwang Halaga
Istraktura ng Kristal	FCC β phase polycrystalline, higit sa lahat (111) oriented
Densidad	3.21 g/cm³
Katigasan	2500 Vickers tigas（500g load）
Laki ng Butil	2~10μm
Kalinisan ng Kemikal	99.99995%
Kapasidad ng init	640 J·kg-1·K-1
Temperatura ng Sublimation	2700 ℃
Flexural na Lakas	415 MPa RT 4-point
Young's Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1

SEM data and structure of CVD SIC films

Ostiya

Wafer Substrate is a wafer made of semiconductor single crystal material. The substrate can directly enter the wafer manufacturing process to produce semiconductor devices, or it can be processed by epitaxial process to produce epitaxial wafers.

Wafer Substrate, as the basic supporting structure of semiconductor devices, directly affects the performance and stability of the devices. As the "foundation" for semiconductor device manufacturing, a series of manufacturing processes such as thin film growth and lithography need to be carried out on the substrate.

Summary of substrate types:

1. Single crystal silicon wafer: currently the most common substrate material, widely used in the manufacture of integrated circuits (ICs), microprocessors, memories, MEMS devices, power devices, etc.;

2. SOI substrate: used for high-performance, low-power integrated circuits, such as high-frequency analog and digital circuits, RF devices and power management chips;

3. Compound semiconductor substrates: Gallium arsenide substrate (GaAs): microwave and millimeter wave communication devices, etc. Gallium nitride substrate (GaN): used for RF power amplifiers, HEMT, etc. Silicon carbide substrate (SiC): used for electric vehicles, power converters and other power devices Indium phosphide substrate (InP): used for lasers, photodetectors, etc.;

4. Sapphire substrate: used for LED manufacturing, RFIC (radio frequency integrated circuit), etc.;

Vetek Semiconductor is a professional SiC Substrate and SOI substrate supplier in China. Our 4H semi-insulating type SiC substrate and 4H Semi Insulating Type SiC Substrate are widely used in key components of semiconductor manufacturing equipment.

Vetek Semiconductor is committed to providing advanced and customizable Wafer Substrate products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.

ALD

Thin film preparation processes can be divided into two categories according to their film forming methods: physical vapor deposition (PVD) and chemical vapor deposition (CVD), of which CVD process equipment accounts for a higher proportion. Atomic layer deposition (ALD) is one of the chemical vapor deposition (CVD).

Atomic layer deposition technology (Atomic Layer Deposition, referred to as ALD) is a vacuum coating process that forms a thin film on the surface of a substrate layer by layer in the form of a single atomic layer. ALD technology is currently being widely adopted by the semiconductor industry.

Atomic layer deposition process:

Atomic layer deposition usually includes a cycle of 4 steps, which is repeated as many times as needed to achieve the required deposition thickness. The following is an example of ALD of Al₂O₃, using precursor substances such as Al(CH₃) (TMA) and O₂.

Step 1) Add TMA precursor vapor to the substrate, TMA will adsorb on the substrate surface and react with it. By selecting appropriate precursor substances and parameters, the reaction will be self-limiting.

Step 2) Remove all residual precursors and reaction products.

Step 3) Low-damage remote plasma irradiation of the surface with reactive oxygen radicals oxidizes the surface and removes surface ligands, a reaction that is also self-limiting due to the limited number of surface ligands.

Step 4) Reaction products are removed from the chamber.

Only step 3 differs between thermal and plasma processes, with H₂O being used in thermal processes and O₂ plasma being used in plasma processes. Since the ALD process deposits (sub)-inch-thick films per cycle, the deposition process can be controlled at the atomic scale.

1st Half-Cycle Purge 2nd Half-Cycle Purge

Highlights of Atomic Layer Deposition (ALD):

1) Grow high-quality thin films with extreme thickness accuracy, and only grow a single atomic layer at a time

2) Wafer thickness can reach 200 mm, with typical uniformity <±2%

3) Excellent step coverage even in high aspect ratio structures

4) Highly fitted coverage

5) Low pinhole and particle levels

6) Low damage and low temperature process

7) Reduce nucleation delay

8) Applicable to a variety of materials and processes

Compared with traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), the advantages of ALD are excellent three-dimensional conformality, large-area film uniformity, and precise thickness control, etc. It is suitable for growing ultra-thin films on complex surface shapes and high aspect ratio structures. Therefore, it is widely applicable to substrates of different shapes and does not require control of reactant flow uniformity.

Comparison of the advantages and disadvantages of PVD technology, CVD technology and ALD technology:

PVD technology	CVD technology	ALD technology
Faster deposition rate	Average deposition rate	Slower deposition rate
Thicker film thickness, poor control of nano-level film thickness precision	Medium film thickness (depends on the number of reaction cycles)	Atomic-level film thickness
The coating has a single directionality	The coating has a single directionality	Good uniformity of large-area film thickness
Poor thickness uniformity	Average step coverage	Best step coverage
Poor step coverage	\	Dense film without pinholes

Advantages of ALD technology compared to CVD technology (Source: ASM)

Vetek Semiconductor is a professional ALD Susceptor products supplier in China. Our ALD Susceptor, SiC coating ALD susceptor and ALD Planetary Susceptor are widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced and customizable ALD Susceptor products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.

Mga Itinatampok na Produkto

Tungkol sa atin

Ang VeTek semiconductor Technology Co., LTD, na itinatag noong 2016, ay isang nangungunang provider ng mga advanced na materyales ng coating para sa industriya ng semiconductor. Ang aming tagapagtatag, isang dating eksperto mula sa Chinese Academy of Sciences' Institute of Materials, ay nagtatag ng kumpanya na may pagtuon sa pagbuo ng mga makabagong solusyon para sa industriya.

Kabilang sa aming mga pangunahing inaalok na produktoCVD silicon carbide (SiC) coatings, tantalum carbide (TaC) coatings, bulk SiC, SiC powder, at high-purity na SiC na materyales. Ang mga pangunahing produkto ay SiC coated graphite susceptor, preheat rings, TaC coated diversion ring, halfmoon parts, atbp., ang kadalisayan ay mas mababa sa 5ppm, maaaring matugunan ang mga kinakailangan ng customer.

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